e/Transmission line measurement

Information
has gloss	eng: Transmission line measurement or Transfer Length Measurement is a technique used in semiconductor physics and engineering to determine the contact resistance between a metal and a semiconductor. The technique involves making a series of metal-semiconductor contacts separated by various distances. Probes are applied to pairs of contacts, and the resistance between them is measured by applying a voltage across the contacts and measuring the resulting current. The current flows from the first probe, into the metal contact, across the metal-semiconductor junction, through the sheet of semiconductor, across the metal-semiconductor junction again (except this time in the other direction), into the second contact, and from there into the second probe and into the external circuit to be measured by an ammeter. The resistance measured is a linear combination (sum) of the contact resistance of the first contact, the contact resistance of the second contact, and the sheet resistance of the semiconductor in-between the contacts.
lexicalization	eng: Transmission line measurement
instance of	(noun) a conductor made with semiconducting material semiconductor, semiconductor unit, semiconductor device

Meaning
German
has gloss	deu: Die Transfer Line Methode (auch Transferlängen-Methode oder Transferlängen-Messung) ist ein Verfahren aus den Halbleiter- und Werkstoffwissenschaften und bezeichnet die Messung des Kontaktwiderstands mit Hilfe einer zweidimensionalen Teststruktur. Das Verfahren wurde erstmals 1964 von dem Physiker William Shockley eingeführt. Es ist heutzutage ein oft verwandtes Verfahren, um die Übergangswiderstände von Halbleiter- und Metallschichten in zum Beispiel der Mikrosystemtechnik zu bestimmen.
lexicalization	deu: Transfer Line Methode