e/Gate oxide

Information
has gloss	eng: The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 - 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel.
lexicalization	eng: gate oxide
instance of	e/Semiconductor device